A comprehensive study of AlGaAs/GaAs beryllium- and carbon-doped base heterojunction bipolar transistor structures subjected to rapid thermal processing-Reference-Cited by-同舟云学术

A comprehensive study of AlGaAs/GaAs beryllium- and carbon-doped base heterojunction bipolar transistor structures subjected to rapid thermal processing

Published:1999-12 Issue:11 Volume:86 Page:6468-6473
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wang Hong,Ing Ng Geok,Zheng Haiqun,Zhang Penghua

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.371710

Reference21 articles.

1. GaAs-based heterojunction bipolar transistors for very high performance electronic circuits

2. Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP

3. Degradation mechanism in carbon-doped GaAs minority-carrier injection devices [HBTs]

4. The presence of isolated hydrogen donors in heavily carbon-doped GaAs

5. Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's

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