Fabrication of 1.5 μm optically pumped vertical-cavity surface-emitting lasers
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Room temperature photopumped 1.5 μm quantum well surface emitting lasers with InGaAsP/InP distributed Bragg reflectors
2. High temperature photopumping of 1.55 μm vertical cavity surface emitting lasers
3. High-reflective 1.5 μm GaInAsP/InP Bragg reflectors grown by metal organic vapor phase epitaxy
4. Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers
5. 144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates
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1. Below‐Bandgap Photoluminescence from GaAs;physica status solidi (b);2019-12-17
2. VCSELs Emitting in the 2–3 µm Wavelength Range;Mid-infrared Semiconductor Optoelectronics;2006
3. Pulse operation and threshold characteristics of 1.55-μm InAlGaAs-InAlAs VCSELs;IEEE Photonics Technology Letters;2000-09
4. Optically pumped continuous-wave operation of InAlGaAs/InAlAs/InP based 1.55 [micro sign]m vertical-cavity surface-emitting laser with SiO2/TiO2 dielectric mirror;Electronics Letters;1999
5. Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy;Journal of Crystal Growth;1998-09
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