Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers-Reference-Cited by-同舟云学术

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Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers

Published:1994-04-29 Issue:9 Volume:30 Page:704-706
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Babić D.I.,Hu E.L.,Streubel K.,Bowers J.E.,Mirin R.P.,Dudley J.J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19940495?crawler=true&mimetype=application/pdf

Reference12 articles.

1. GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode

2. Room temperature pulsed operation of 1.5 mu m GaInAsP/InP vertical-cavity surface-emitting laser

3. Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers

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1. VECSELs in the Wavelength Range 1.18–1.55 μm;Vertical External Cavity Surface Emitting Lasers;2021-09-17

2. Below‐Bandgap Photoluminescence from GaAs;physica status solidi (b);2019-12-17

3. Optically pumped VECSELs: review of technology and progress;Journal of Physics D: Applied Physics;2017-08-23

4. Thermal Management in Long-Wavelength Flip-Chip Semiconductor Disk Lasers;IEEE Journal of Selected Topics in Quantum Electronics;2015-11

5. A 133 µm picosecond pulse generator based on semiconductor disk mode-locked laser and bismuth fiber amplifier;Optics Express;2014-05-05

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