Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106781
Reference8 articles.
1. Surface emitting semiconductor lasers
2. Room‐temperature continuous wave lasing characteristics of a GaAs vertical cavity surface‐emitting laser
3. Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes
4. Submilliamp threshold vertical‐cavity laser diodes
5. Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
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2. Improvement of kink characteristic of proton-implanted VCSEL with ITO overcoating;SPIE Proceedings;2004-06-16
3. 1.55-μm buried-heterostructure VCSELs with InGaAsP/lnP-GaAs/AlAs DBRs on a GaAs substrate;IEEE Journal of Quantum Electronics;2001
4. Improvement of Current Injection Uniformity and Device Resistance in Long-Wavelength Vertical-Cavity Surface-Emitting Laser Using a Tunnel Junction;Japanese Journal of Applied Physics;2000-07-15
5. III: Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers;Progress in Optics;1998
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