Room temperature photopumped 1.5 μm quantum well surface emitting lasers with InGaAsP/InP distributed Bragg reflectors-Reference-Cited by-同舟云学术

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Room temperature photopumped 1.5 μm quantum well surface emitting lasers with InGaAsP/InP distributed Bragg reflectors

Published:1991 Issue:17 Volume:27 Page:1540
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Tai K.,Choa F.S.,Tsang W.T.,Chu S.N.G.,Wynn J.D.,Sergent A.M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19910967?crawler=true&mimetype=application/pdf

Reference10 articles.

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Long-wavelength vertical-cavity lasers and amplifiers;IEEE Journal of Selected Topics in Quantum Electronics;2000-11

2. Photopumped lasing at 1.25 μm of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers;IEEE Photonics Technology Letters;1997-12

3. Monolithic vertical cavity device lasing at 1.55 [micro sign]m in InGaAlAs system;Electronics Letters;1997

4. Room-temperature photo-pumped operation of 1.58-μm vertical-cavity lasers fabricated on Si substrates using wafer bonding;IEEE Photonics Technology Letters;1996-11

5. 1.5 μm In0.53Al0.14Ga0.33As/In0.52Al0.48As Distributed Bragg Reflector and Single Cavity Active Layer Grown with In-Situ Double Beam Laser Reflectometry;MRS Proceedings;1996

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