Stability of phase-separated microstructure in LPE-grown InGaAs epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid‐phase epitaxial (001) GaInAsP layers
2. Spinodal decomposition in InGaAsP epitaxial layers
3. Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−ylayers lattice matched to InP substrates
4. Immiscibility and spinodal decomposition in III/V alloys
5. Surface layer spinodal decomposition in In1−xGaxAsyP1−yand In1−xGaxAs grown by hydride transport vapor‐phase epitaxy
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1. The Thermodynamics and Kinetics of Phase Separation in III-V Semiconductor Alloys;Thin Solid Films;2024-03
2. Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence;Journal of Applied Physics;2015-09-21
3. An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells;Semiconductor Science and Technology;2005-09-19
4. AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1−xP epitaxial layers;Materials Science and Engineering: B;2002-04
5. Microstructural Characteristics of Mixed III–V Layers;Properties of Complex Inorganic Solids 2;2000
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