Hall mobility profiling in high electron mobility transistor structures
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs
2. Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs
3. Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic stripping
4. Proc. 1st Int. Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, 1991;Lojek,1991
5. Measurement of 2DEG Parameters by Low‐Magnetic‐Field Hall Techniques
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