Role of molecular beam epitaxy in the optoelectronic field
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference31 articles.
1. MBE growth of extremely high-quality GaAs–AlGaAs GRIN-SCH lasers with a superlattice buffer layer
2. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
3. D. J. Arent, H. P. Meier and W. Walter, submitted to Appl. Phys. Lett.
4. Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mass production of laser diodes by MBE;Microelectronics Journal;1994-11
2. Evaluation of III–V growth technologies for optoelectronic applications;Materials Science and Engineering: B;1993-11
3. Evaluation of III–V growth technologies for optoelectronic applications;European Materials Research Society Symposia Proceedings;1993
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