Mass production of laser diodes by MBE
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference16 articles.
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2. GaAsAlxGa1xAs double-heterostructure laser prepared by molecular-beam epitaxy;Cho;Appl. Phys. Lett.,1974
3. Low-current-threshold and high-lasing uniformity GaAsAlxGa1xAs double-heterostructure lasers grown by molecular beam epitaxy;Tsang;Appl. Phys. Lett.,1981
4. Single-longitudinal-mode selfaligned (AlGa)As double-heterostructure laser-fabricated by molecular beam epitaxy;Tanaka;Jpn. J. Appl. Phys.,1985
5. MBE as a mass production technology for AlGaAs lasers;Tanaka,1991
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxy;Materials Science of Thin Films;2002
2. Green laser diodes with channelled-substrate planar waveguide structure;Electronics Letters;1995-09-14
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