Silicon homoepitaxy using photochemical vapor deposition: a reflection high energy electron diffraction and transmission electron microscopy study
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. ArF excimer laser induced photolytic growth of Si homoepitaxial films from Si2H6at 330 °C
2. Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition
3. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
4. Silicon molecular beam epitaxy
5. Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and characterization of silicon thin films employing supersonic jets of SiH4 on polysilicon and Si(100);Journal of Applied Physics;1997-12-15
2. Growth and characterization of silicon thin films employing supersonic jets;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-07
3. Surface morphology of homoepitaxial silicon thin films grown using energetic supersonic jets of disilane;Applied Physics Letters;1996-08-19
4. Epitaxial silicon growth using supersonic jets of disilane: A model study of energetic jet deposition;Applied Physics Letters;1995-11-13
5. ArF excimer laser-enhanced photochemical vapor deposition of epitaxial Si from Si2H6: A simple growth kinetic model;Journal of Electronic Materials;1992-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3