Surface morphology of homoepitaxial silicon thin films grown using energetic supersonic jets of disilane
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117074
Reference22 articles.
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Chapter 16 Growth and Etching of Semiconductors;Dynamics;2008
2. Low-Temperature Growth of Epitaxial β-SiC on Si(100) Using Supersonic Molecular Beams of Methylsilane;The Journal of Physical Chemistry B;2002-07-16
3. Orientation of aluminum nitride films grown with hyperthermal molecular beams;Journal of Crystal Growth;2000-09
4. Pattern formation and shadow instability in collimated energetic molecular beam growth of silicon;Applied Physics Letters;1999-01-04
5. Synthesis of SiC on Si by Seeded Supersonic Beams of Fullerenes;MRS Proceedings;1999
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