Control of Zn(S, Se) composition using reflection high energy electron diffraction oscillations
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth
2. Dynamics of film growth of GaAs by MBE from Rheed observations
3. RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)
4. Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements
5. Reflection high‐energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: Application to pseudomorphic heterostructures
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1. Growth of sulphur-based ternary and quaternary epilayers for use in multilayer devices;Journal of Crystal Growth;1998-02
2. Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates;Applied Physics Letters;1997-06-30
3. In-Situ Characterization of II-VI Molecular Beam Epitaxy;physica status solidi (b);1995-02-01
4. Molecular beam epitaxy of II–VI wide bandgap semiconductors;Philips Journal of Research;1995-01
5. An investigation of MBE growth of (Zn, Mg)Se using RHEED oscillations;Surface Science;1994-05
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