Molecular beam epitaxy of II–VI wide bandgap semiconductors-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of II–VI wide bandgap semiconductors

Published:1995-01 Issue:3 Volume:49 Page:245-265
ISSN:0165-5817
Container-title:Philips Journal of Research
language:en
Short-container-title:Philips Journal of Research

Author:

Gaines J.M.

Publisher

Elsevier BV

Subject

General Engineering

Reference30 articles.

1. Blue‐green laser diodes

2. B.J. Fitzpatrick, US Patent 5 260 958.

3. Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy

4. Blue‐green injection lasers containing pseudomorphic Zn1−xMgxSySe1−ycladding layers and operating up to 394 K

5. Continuous-wave, room temperature, ridge waveguide green-blue diode laser

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping;Semiconductors;2015-03

2. Temperature dependence of Raman scattering and luminescence of the disordered Zn0.5Cd0.5Se alloy;Microelectronics Journal;2002-04

3. Growth of ZnCdSe quantum wells at low substrate temperatures using migration enhanced epitaxy;Journal of Crystal Growth;2001-07

4. Visible-Wavelength Laser Diodes;Semiconductor Lasers II;1999

5. The surface valence band structure of the two phases of ZnSe(100);Surface Science;1998-05

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