Determination of residual strain by reflectivity, X-ray diffraction and Raman spectroscopy in ZnSe epilayers grown on GaAs (001), InP(001) and GaSb(001) by metal-organic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Determination of residual strain by reflectivity, X-ray diffraction and Raman spectroscopy in ZnSe epilayers grown on GaAs (001), InP(001) and GaSb(001) by metal-organic vapor phase epitaxy

Published:1993-11 Issue:2-3 Volume:21 Page:257-261
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Stoehr M.,Maurin M.,Hamdani F.,Lascaray J.P.,Barbusse D.,Fraisse B.,Fourcade R.,Abraham P.,Monteil Y.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAs

2. Piezo- and photomodulated reflectivity spectra of ZnSe/GaAs and CdTe/InSb epilayers

3. Lattice relaxation mechanism of ZnSe layer grown on a (100) GaAs substrate tilted toward 〈011〉

4. Effect of substrate materials in the growth of ZnSe on GaAs and GaP substrates

5. Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In‐Ga oven

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Manifestation of Crystal Lattice Distortions in the IR Reflection Spectra of Abrasion-Treated ZnSe Ceramics;Journal of Applied Spectroscopy;2017-07

2. Methylpentacarbonylmanganese as organometallic precursor for the epitaxial growth of manganese selenide heterostructures;Journal of Crystal Growth;1998-10

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