Lattice relaxation mechanism of ZnSe layer grown on a (100) GaAs substrate tilted toward 〈011〉
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341963
Reference13 articles.
1. The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure
2. Coherent Growth of ZnSe on GaAs by MOCVD
3. Growth of high quality GaAs layers on Si substrates by MOCVD
4. Dislocation reduction in epitaxial GaAs on Si(100)
5. Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVD
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