Hydrogen incorporation into GaAs, InP and related compounds during epitaxial growth and device processing-Reference-Cited by-同舟云学术

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Hydrogen incorporation into GaAs, InP and related compounds during epitaxial growth and device processing

Published:1992-03 Issue:2 Volume:13 Page:171-175
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Pearton S.J.,Abernathy C.R.,Hobson W.S.,Ren F.,Fullowan T.R.,Lopata J.,Chakrabarti U.K.,Stavola M.,Kozuch D.M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Hydrogen in crystalline semiconductors

2. The diffusion of hydrogen in silicon and mechanisms for “unintentional” hydrogenation during ion beam processing

3. Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy

4. High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

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1. Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs;Solid-State Electronics;2002-09

2. Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs;Solid-State Electronics;2001-09

3. Device Damage During Low Temperature High-Density Plasma Chemical Vapor Deposition;Handbook of Advanced Plasma Processing Techniques;2000

4. Wet and Dry Etching Characteristics of Electron Beam Deposited SiO and SiO2;MRS Proceedings;1999

5. Device degradation during low temperature ECR-CVD. PART III: GaAs/InGaP HEMTs;Solid-State Electronics;1998-06

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