Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs-Reference-Cited by-同舟云学术

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Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs

Published:2001-09 Issue:9 Volume:45 Page:1625-1638
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Luo B.,Ren F.,Lee K.P.,Pearton S.J.,Wu C.-S.,Johnson D.,Sasserath J.N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs

2. Plasma-induced damage of GaAs pn-junction diodes using electron cyclotron resonance generated Cl2/Ar, BCl3/Ar, Cl2/BCl3/Ar, and SiCl4/Ar plasmas

3. Plasma passivation of etch-induced surface damage on GaAs

4. Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4

5. Time dependence of etch-induced damage generated by an electron cyclotron resonance source

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1. Selectively hydrogen-pretreated AlGaAs/InGaAs p-HEMTs and their application to an enhancement/depletion-mode HEMT;Solid-State Electronics;2005-01

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