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Hydrogen, fluorine ion implantation effects on polycrystalline silicon grain boundaries

  • Published:1994-09 Issue:1-4 Volume:34 Page:211-217
  • ISSN:0927-0248
  • Container-title:Solar Energy Materials and Solar Cells
  • language:en
  • Short-container-title:Solar Energy Materials and Solar Cells

Author:

Yoshida Akihisa,Kitagawa Masatoshi,Tojo Fumiyo,Egashira Nobutaka,Nakagawa Keisuke,Izumi Tomio,Hirao Takashi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Method of Scalable Polysilicon Resistor by Adjusting Shielding Metal in CMOS Process;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. Passivation of Ring Defects in Czochralski-Grown Silicon Using Magnesium Fluoride Films;ACS Applied Energy Materials;2022-07-20

3. Fluorine Passivation of Defects and Interfaces in Crystalline Silicon;ACS Applied Materials & Interfaces;2021-06-30

4. Long-term stability and electrical properties of fluorine doped polysilicon IC-resistors;Materials Science in Semiconductor Processing;2001-08

5. Long-term stability and electrical properties of compensation doped poly-Si IC-resistors;IEEE Transactions on Electron Devices;2000
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