Passivation of Ring Defects in Czochralski-Grown Silicon Using Magnesium Fluoride Films-Reference-Cited by-同舟云学术

Passivation of Ring Defects in Czochralski-Grown Silicon Using Magnesium Fluoride Films

Published:2022-07-20 Issue:8 Volume:5 Page:9877-9884
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Basnet Rabin¹^ORCID,Sio Hang Cheong¹^ORCID,Sun Chang¹,Nguyen Hieu T.¹^ORCID,Macdonald Daniel¹

Affiliation:

1. School of Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

Funder

Australian Centre for Advanced Photovoltaics

Australian Renewable Energy Agency

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.2c01550

Reference41 articles.

1. Advanced Bulk Defect Passivation for Silicon Solar Cells

2. Origins of hydrogen that passivates bulk defects in silicon heterojunction solar cells

3. Hydrogenation of Phosphorus-Doped Polycrystalline Silicon Films for Passivating Contact Solar Cells

4. Thermal activation of hydrogen for defect passivation in poly-Si based passivating contacts

5. Hydrogen passivation of defect-rich n-type Czochralski silicon and oxygen precipitates

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