Ohmic contacts on diamond by B ion implantation and Ta–Au metallization-Reference-Cited by-同舟云学术

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Ohmic contacts on diamond by B ion implantation and Ta–Au metallization

Published:2002-09 Issue:9 Volume:11 Page:1709-1712
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Zhen C.M,Wang Y.Y,Guo Q.F,Zhao M,He Z.W,Guo Y.P

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Growth and characterization of diamond films on nondiamond substrates for electronic applications

2. Diamond transistor performance and fabrication

3. Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors,1990

4. Ohmic contacts on diamond by B ion implantation and TiC‐Au and TaSi2‐Au metallization

5. The effect of metallization on the ohmic contact resistivity to heavily B-doped polycrystalline diamond films

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1. Contact resistance of various metallisation schemes to superconducting boron doped diamond between 1.9 and 300 K;Carbon;2021-07

2. Diamond as substrate for 3C-SiC growth: A TEM study;physica status solidi (a);2014-06-05

3. Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase;Diamond and Related Materials;2013-05

4. Metal–semiconductor ohmic contacts: An ab initio Density Functional Theory study of the structural and electronic properties of metal–diamond (111)-(1×1) interfaces;Diamond and Related Materials;2012-03

5. Diamond–metal contacts: interface barriers and real-time characterization;Journal of Physics: Condensed Matter;2009-08-19

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