Diamond as substrate for 3C-SiC growth: A TEM study-Reference-Cited by-同舟云学术

Diamond as substrate for 3C-SiC growth: A TEM study

Published:2014-06-05 Issue:10 Volume:211 Page:2302-2306
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lloret F.¹²,Piñero J.¹,Araujo D.¹,Villar M. P.¹,Gheeraert E.³,Vo-Ha A.⁴,Soulière V.⁴,Rebaud M.⁴,Carole D.⁴,Ferro G.⁴

Affiliation:

1. Departamento de Ciencias de los Materiales e Ingenieria Metalurgica y Quimica Inorganica; Universidad de Cadiz; 11510 Puerto Real (Cadiz) Spain

2. Institute of Electronic Structure and Laser; FORTH; Vassillika Vouton (Heraklion) Greece

3. Institut Néel; CNRS; 25 Avenue des Martyrs, BP 166 38042 Grenoble France

4. Université Claude Bernard Lyon 1, CNRS; UMR 5615, Laboratoire des Multimatériaux et Interfaces; Villeurbanne France

Funder

European project LAST-POWER

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431179/fullpdf

Reference14 articles.

1. Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD

2. Technology and electrical properties of ohmic contacts and Schottky diodes on homoepitaxial layers grown on (100) diamond surfaces

3. Electrical characterization of Al/Si ohmic contacts to heavily boron doped polycrystalline diamond films

4. Ohmic contacts on diamond by B ion implantation and Ta–Au metallization

5. Carbide contacts on homoepitaxial diamond films

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of alternating precursor supply and gas flow on the LPCVD growth behavior of polycrystalline 3C-SiC thin films on Si;Sensors and Actuators A: Physical;2024-07