Dislocation behaviour at heterointerfaces in III–V semiconductors
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
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1. Misfit dislocation interactions observed by cathodoluminescence in InGaAs on off-cut, patterned GaAs;Journal of Applied Physics;2003-08
2. Molecular beam epitaxy of heterostructures on metamorphic AlxGayIn1 − x − yAs buffer layers;Journal of Crystal Growth;1997-05
3. Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures;Journal of Applied Physics;1997-04
4. MBE growth of metamorphic In(Ga)AlAs buffers;Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors;1997
5. Growth of high quality Al0.48In0.52As/Ga0.47In 0.53As heterostructures using strain relaxed AlxGayIn1−x−yAs buffer layers on GaAs;Applied Physics Letters;1996-07-15
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