Direct evidence of the two-electron character of DX centers based on co-doping with shallow donors and application of high pressure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference26 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
3. Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical and electronic properties of tin quantum wires formed on vicinal surface of GaAs;SPIE Proceedings;2002-08-09
2. Wavelength dependent negative and positive persistent photoconductivity in Sn δ-doped GaAs structures;Semiconductor Science and Technology;2000-08-09
3. Negative persistent photoconductivity in GaAs (δ-Sn) structures;Journal of Experimental and Theoretical Physics;1999-12
4. Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques;Semiconductors and Semimetals;1998
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