Photoluminescence spectra of Sn doped GaAs epitaxial layers: Influence of epitaxial process parameters
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference12 articles.
1. The Behaviour of Some Impurities in III-V Compounds
2. Photolumineszenz-spektrum des Sn-Akzeptors in GaAs
3. The system Ga–As–Sn: Incorporation of Sn into GaAs
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1. Bandgap shrinkage of degenerate p-type GaAs by photoluminescence spectroscopy;Materials Chemistry and Physics;1995-11
2. Substrate‐induced peak in the photoluminescence of heavily doped epitaxial GaAs;Journal of Applied Physics;1989-02-15
3. Solubility and point defect-dopant interactions in GaAs—II;Journal of Physics and Chemistry of Solids;1979-01
4. LUMINESCENCE OF COMMERCIAL LED MATERIALS;Luminescence and the Light Emitting Diode;1978
5. Orientation dependent growth and luminescence of selective GaAs-Sn LPE;Journal of Crystal Growth;1976-11
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