Bandgap shrinkage of degenerate p-type GaAs by photoluminescence spectroscopy
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference27 articles.
1. G.W. Wang, R.L. Pierson, P.M. Asbeck, K.C. Wang, N.L. Wang, R. Nubling, M.F. Chang, J. Salerno and S. Sastry, IEEE Trans. Electron Device Lett., 12 (191) 347.
2. Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily dopedp‐type GaAs
3. Heavily dopedp‐GaAs grown by low‐pressure organometallic vapor phase epitaxy using liquid CCl4
4. Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride
5. Enhanced hot‐electron photoluminescence from heavily carbon‐doped GaAs
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