1. Semiconducting III-V Compounds;Hilsum,1961
2. The band gap was assumed to be 1.519 eV so the activation energies in Table 8.6 have all been modified to al low for this. See also the fol lowing references:
3. Ionization Energy of Mg and Be Acceptors in GaAs
4. Photoluminescence from Mg‐implanted GaAs