Chemical trends for deep antisite defect levels in III –V compounds
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference36 articles.
1. Chemical trends for native defects in III-V–compound semiconductors
2. Optical Properties of As-Antisite andEL2Defects in GaAs
3. Optically Detected Electron-Nuclear Double Resonance of As-Antisite Defects in GaAs
4. Point Defects in Semiconductors I;Lannoo,1981
5. Electronic Structure and Properties of Solids;Harrison,1980
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1. Mechanism of Electron Accumulation Layer Formation at the MBE-grown InAs(111)A Surface;Hyomen Kagaku;2008
2. Electronic structure of defect complexes in crystalline and amorphous GaAs;Philosophical Magazine B;1991-03
3. A study of sputter-induced defects in magnetron-sputtered CoSi2 and TiSi2 Schottky barriers on n- and p-type GaP;Applied Physics A;1991-01
4. Comment on ‘‘Atomic model for theEL2defect in GaAs’’;Physical Review B;1988-02-15
5. Self-Consistent Tight-Binding Investigation of Chemical Trends for Native Defects in III–V Semiconductors;physica status solidi (b);1987-06-01
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