Electronic structure of defect complexes in crystalline and amorphous GaAs
Author:
Affiliation:
1. a Department of Physics , University of Allahabad , Allahabad , 211002 , India
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819108225978
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4. Bachelet , G. B. and Scheffler , M. Proceedings of the 17th International Conference on the Physics of Semiconductors. 1984, San Francisco, California. Edited by: Chadi , D. J. and Harrison , W. A. pp.755New York: Springer.
5. AsGaantisite defect in GaAs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Signatures of Bulk and Surface Arsenic Antisite Defects in GaAs(110);Physical Review Letters;1995-08-28
2. A theoretical study of stoichiometric and As-rich amorphous GaAs;Journal of Physics: Condensed Matter;1993-11-15
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