Mechanism of Electron Accumulation Layer Formation at the MBE-grown InAs(111)A Surface-Reference-Cited by-同舟云学术

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Mechanism of Electron Accumulation Layer Formation at the MBE-grown InAs(111)A Surface

Published:2008 Issue:12 Volume:29 Page:747-757
ISSN:0388-5321
Container-title:Hyomen Kagaku
language:en
Short-container-title:Journal of The Surface Science Society of Japan

Author:

KANISAWA Kiyoshi¹,FUJISAWA Toshimasa¹

Affiliation:

1. NTT Basic Research Laboratories, NTT Corporation

Publisher

Surface Science Society Japan

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

Link

http://www.jstage.jst.go.jp/article/jsssj/29/12/29_12_747/_pdf

Reference64 articles.

1. Quantum Phenomena at Compound Semiconductor Surfaces

2. 4) O.G. Folberth and H. Weiss: Z. Naturforsch. 11a, 510 (1956).

3. 5) H. Rupprecht: Z. Naturforsch 13a, 1094 (1958).

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Origin of surface and subband states at the InAs(111)A surface;Physical Review Materials;2023-06-20

2. Scale-Dependent Optimized Homoepitaxy of InAs(111)A;Crystal Growth & Design;2022-08-30

3. Tunable tunnel barriers in a semiconductor via ionization of individual atoms;Journal of Physics: Condensed Matter;2021-05-28

4. Quantum Rings Engineered by Atom Manipulation;Physical Review Letters;2019-08-06

5. Semiconductor Quantum Structures with Single-atom Precision;NTT Technical Review;2015-08

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