Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion-Reference-Cited by-同舟云学术

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Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

Published:1998-09 Issue:1-2 Volume:253 Page:269-274
ISSN:0921-5093
Container-title:Materials Science and Engineering: A
language:en
Short-container-title:Materials Science and Engineering: A

Author:

Agarwal Aditya,Gossmann H.-J,Eaglesham D.J,Pelaz L,Jacobson D.C,Poate J.M,Haynes T.E

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, 1995.

2. P. Singer, Semiconductors International, June, 72, 1996.

3. Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon

4. Implantation damage and the anomalous transient diffusion of ion‐implanted boron

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous activation of shallow B+ implants in Ge;Materials Letters;2011-12

2. Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions;Journal of Applied Physics;2010-06-15

3. Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions;Journal of Applied Physics;2009-02-15

4. Unusual hydrogen distribution and its change in hydrogenated amorphous silicon prepared using bias electric-field molecular beam deposition;Applied Physics Letters;2006-07-03

5. Surface defects created by 20keV Xe ion irradiation of Ge(111);Surface Science;2005-01

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