Anomalous activation of shallow B+ implants in Ge-Reference-Cited by-同舟云学术

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Anomalous activation of shallow B+ implants in Ge

Published:2011-12 Issue:23-24 Volume:65 Page:3540-3543
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Yates B.R.,Darby B.L.,Rudawski N.G.,Jones K.S.,Petersen D.H.,Hansen O.,Lin R.,Nielsen P.F.,Kontos A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Physics of semiconductor devices;Sze,2007

2. Diffusion of ion-implanted boron in germanium

3. Solid Solubilities of Impurity Elements in Germanium and Silicon*

4. Steady-state solubility of substitutional impurities in silicon

5. Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator

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1. Milliseconds Thermal Processing of Boron Hyperdoped Germanium;physica status solidi (a);2024-08-04

2. Identification and control of crystalline nuclei facets imparting to the breaking of symmetry selection rules of optical phonon modes in GaP/Si (001);Surfaces and Interfaces;2024-01

3. Raman spectroscopy investigation of inter-diffusion in GaP/Ge(111) heterostructures;Superlattices and Microstructures;2019-01

4. Band offsets of La2O3 films on Ge substrates grown by radio frequency magnetron sputtering;Materials Letters;2014-02

5. Processing of germanium for integrated circuits;TURKISH JOURNAL OF PHYSICS;2014

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