Effects of polycrystalline AlN film on the dynamic performance of AlGaN/GaN high electron mobility transistors
Author:
Funder
Shanghai Sailing Program
National Scientific Foundation of Shanghai
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference25 articles.
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1. Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces;Crystal Growth & Design;2024-03-06
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3. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates;CrystEngComm;2022
4. The influence of intrinsic atomic defects on the electronic and optical properties of the single layer AlN;Physica Scripta;2020-06-03
5. Influence of Poly-AlN Passivation on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs;IEEE Transactions on Nuclear Science;2019-10
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