Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)-Reference-Cited by-同舟云学术

Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)

Published:2017-02 Issue: Volume:116 Page:144-151
ISSN:0264-1275
Container-title:Materials & Design
language:en
Short-container-title:Materials & Design

Author:

Marzegalli Anna,Cortinovis Andrea,Basso Basset Francesco,Bonera Emiliano,Pezzoli Fabio,Scaccabarozzi Andrea,Isa Fabio,Isella Giovanni,Zaumseil Peter,Capellini Giovanni,Schroeder Thomas,Miglio Leo

Funder

PileGrowth Tech

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference28 articles.

1. Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

2. Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures

3. Defect reduction effects in GaAs on Si substrates by thermal annealing

4. High quality Ge on Si by epitaxial necking

5. The effect of substrate growth area on misfit and threading dislocation densities in mismatched heterostructures

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