Homoepitaxial diamond chemical vapor deposition for ultra-light doping

Author:

Teraji T.,Isoya J.,Watanabe K.,Koizumi S.,Koide Y.

Funder

Japan Society for the Promotion of Science, Japan

Japan Science and Technology Agency

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE original;Kato;J. Cryst. Growth,2007

2. Defects and carrier compensation in semi-insulating 4H-SiC substrates;Son;Phys. Rev. B,2007

3. High temperature electrical conductivity measurements of natural diamond and diamond films;Vandersande;Surf. Coat. Technol.,1991

4. High carrier mobility in single-crystal plasma-deposited diamond;Isberg;Science,2002

5. Chemical vapor deposition of 12C isotopically enriched polycrystalline diamond;Teraji;Jpn. J. Appl. Phys.,2012

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