Author:
Teraji T.,Isoya J.,Watanabe K.,Koizumi S.,Koide Y.
Funder
Japan Society for the Promotion of Science, Japan
Japan Science and Technology Agency
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE original;Kato;J. Cryst. Growth,2007
2. Defects and carrier compensation in semi-insulating 4H-SiC substrates;Son;Phys. Rev. B,2007
3. High temperature electrical conductivity measurements of natural diamond and diamond films;Vandersande;Surf. Coat. Technol.,1991
4. High carrier mobility in single-crystal plasma-deposited diamond;Isberg;Science,2002
5. Chemical vapor deposition of 12C isotopically enriched polycrystalline diamond;Teraji;Jpn. J. Appl. Phys.,2012
Cited by
9 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献