Cascade mechanism and mechanical property of the dislocation loop formation in GaN twin crystal-induced crystallization-Reference-Cited by-同舟云学术

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Cascade mechanism and mechanical property of the dislocation loop formation in GaN twin crystal-induced crystallization

Published:2022-05 Issue: Volume:142 Page:106468
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Tan Min,Gao Tinghong,Xiao Qingquan,Gao Yue,Liu Yutao,Xie Quan,Chen Qian,Tian Zean,Liang Yongchao,Wang Bei

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference55 articles.

1. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer;Zhang;Opt Express,2013

2. Improving radiative recombination efficiency of green light-emitting diodes;Ding;Mater. Sci. Technol.,2018

3. Low-threshold-current-densityAlGaN-cladding-free m-plane InGaN/GaN laser diodes;Farrell;Appl. Phys. Lett.,2010

4. Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode;Han;Mater. Sci. Semicond. Process.,2015

5. Monolithic flexible vertical GaN light-emitting diodes for a transparent wireless brain optical stimulator;Lee;Adv. Mater.,2018

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