High quality of N-polar GaN film fabricated by layer transfer technology using high selective material removal rate of CMP
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference27 articles.
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1. Wafer-scale N-polar GaN heterogeneous structure fabricated by surface active bonding and laser lift-off;Journal of Alloys and Compounds;2024-11
2. Study on the Slurry for Chemical Mechanical Polishing of GaN Wafer;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17
3. High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology;Crystals;2024-03-04
4. Study of dry etched N-polar (Al)GaN surfaces obtained by inductively coupled plasma etching;Frontiers in Physics;2022-10-26
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