High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates-Reference-Cited by-同舟云学术

High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates

Published:2018 Issue:42 Volume:6 Page:11255-11260
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Yuan¹²³⁴,Wang Wenliang¹²³⁴⁵^ORCID,Huang Liegen¹²³⁴,Zheng Yulin¹²³⁴,Li Xiaochan¹²³⁴,Tang Xin¹²³⁴,Xie Wentong⁵⁶⁴,Chen Xiaofen⁵⁶⁴,Li Guoqiang¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510641

4. China

5. Guangdong Choicore Optoelectronics Co., Ltd

6. Heyuan 517003

Abstract

High-performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole injection.

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC04477E

Reference32 articles.

1. High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer

2. Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure