A benchmark study on tetravalent ion doping in heteroepitaxial β-Ga2O3 films fabricated by pulsed laser deposition
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Microstructure and optical properties of β-Ga2O3 thin films fabricated by pulsed laser deposition;Thin Solid Films;2024-05
2. Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001);Applied Physics Letters;2024-03-11
3. Epitaxial Tantalum‐Doped β‐Ga2O3 Thin Films Grown on Mgo (001) Substrate by Pulsed Laser Deposition;physica status solidi (RRL) – Rapid Research Letters;2024-03-08
4. High performance solar blind avalanche photodetector based on a single-crystalline ɛ-Ga2O3/BaSnO3 heterojunction;Materials Today Physics;2024-03
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