Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM-Reference-Cited by-同舟云学术

Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM

Published:2017-11 Issue: Volume:71 Page:433-440
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Rodriguez Ph.,Famulok R.,Le Friec Y.,Reynard J.-Ph.,Bozon B.-N.,Boyer F.,Dabertrand K.,Jahan C.,Favier S.,Mazel Y.,Previtali B.,Gergaud P.,Nemouchi F.

Funder

French National Research Agency (ANR

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. L. Carbonell, H. Volders, N. Heylen, K. Kellens, R. Caluwaerts, K. Devriendt, E.A. Sanchez, J. Wouters, V. Gravey, K. Shah, Q. Luo, A. Sundarrajan, J. Lu, J. Aubuchon, P. Ma, M. Narasimhan, A. Cockburn, Z. Tökei, G.P. Beyer, Metallization of sub-30nm interconnects: Comparison of different liner/seed combinations, in: Proceedings of the 2009 IEEE International Interconnect Technology Conference, 2009, pp. 200–202. 〈http://dx.doi.org/10.1109/IITC.2009.5090387〉.

2. Evaluation of metallization options for advanced Cu interconnects application;Jourdan;ECS Trans.,2011

3. Z. Tökei, End of Cu roadmap and beyond Cu, in: Proceedings of the 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016, pp. 1–58. 〈http://dx.doi.org/10.1109/IITC-AMC.2016.7507738〉.

4. T. Nogami, M. He, X. Zhang, K. Tanwar, R. Patlolla, J. Kelly, D. Rath, M. Krishnan, X. Lin, O. Straten, H. Shobha, J. Li, A. Madan, P. Flaitz, C. Parks, C.K. Hu, C. Penny, A. Simon, T. Bolom, J. Maniscalco, D. Canaperi, T. Spooner, D. Edelstein, CVD-Co/Cu(Mn) integration and reliability for 10nm node, in: Proceedings of the 2013 IEEE International Interconnect Technology Conference, 2013, pp. 1–3. 〈http://dx.doi.org/10.1109/IITC.2013.6615592〉.

5. R.H. Kim, B.H. Kim, J.N. Kim, J.J. Lee, J.M. Baek, J.H. Hwang, J. Hwang, J. Chang, S.Y. Yoo, T.J. Yim, K.M. Chung, K.H. Park, T. Oszinda, I.S. Kim, E.B. Lee, S.D. Nam, S. Jung, Y.W. Cho, H.J. Choi, J.S. Kim, S.H. Ahn, S.H. Park, B.U. Yoon, J.H. Ku, S.S. Paak, N.I. Lee, S. Choi, H.K. Kang, E.S. Jung, High performance Cu/low-k interconnect strategy beyond 10nm logic technology, in: Proceedings of the 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015, pp. 1–4. 〈http://dx.doi.org/10.1109/IITC-MAM.2015.7325599〉.

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