The impact of mesa etching method on IR photodetector current-voltage characteristics-Reference-Cited by-同舟云学术

The impact of mesa etching method on IR photodetector current-voltage characteristics

Published:2020-11 Issue: Volume:118 Page:105219
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Smoczyński Dariusz,Czuba Krzysztof,Papis-Polakowska Ewa,Kozłowski Paweł,Ratajczak Jacek,Sankowska Iwona,Jasik Agata

Funder

National Center for Research and Development

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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5. Dark current improvement due to dry-etch process in InAs/GaSb type-II superlattice LWIR photodetector with nBn structure;Lee;Infrared Phys. Technol.,2018

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