A simplified model for the vapor – Solid distribution of Silicon Germanium Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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A simplified model for the vapor – Solid distribution of Silicon Germanium Chemical Vapor Deposition

Published:2021-04 Issue: Volume:125 Page:105649
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Tomasini Pierre^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Use of high order precursors for manufacturing gate all around devices;Hikavyy;Mater. Sci. Semicond. Process.,2017

2. Si, SiGe, and Si1−yCy on Si: epitaxy of group-IV semiconductors for nanoelectronics, chap. 1;Hartmann,2017

3. Computational Modeling in Semiconductor Processing;Meyyappan,1995

4. Fundamental aspects of MOVPE, chap. 2;Stringfellow,2020

5. Chemical vapor deposition modeling - an assessment of current status;Gokoglu,1990

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Vapor Deposition of Elemental Crystallogen Thin Films;ECS Journal of Solid State Science and Technology;2024-04-01

2. Crying Wulff on vapor–solid distributions of crystallogen chemical vapor deposition via p-block element hydride thermal decomposition;Journal of Crystal Growth;2023-04

3. Thermodynamics of germanium chemical vapor deposition via germane and digermane;Chemical Engineering Science;2022-02

4. Thermodynamic Theory of Silicon Chemical Vapor Deposition;Chemistry of Materials;2021-03-10

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