Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature-Reference-Cited by-同舟云学术

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Bias voltage dependence properties of Nb-doped indium tin oxide thin films by RF magnetron sputtering at room temperature

Published:2014-01 Issue: Volume:17 Page:216-221
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Li Shi-na,Ma Rui-xin,Ma Chun-hong,Xiao Yu-qin,Li Dong-ran,He Liang-wei,Zhu Hong-min

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. D.S. Ginleyetal, (Eds.), Hand Book of Transparent Conductors, pp. 1–8.

2. New technologies for CIGS photovoltaics

3. Tin doped indium oxide thin films: Electrical properties

4. Properties of rf-sputtered indium–tin-oxynitride thin films

5. Indium tin oxide films deposited by thermionic-enhanced DC magnetron sputtering on unheated polyethylene terephthalate polymer substrate

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1. In–Zn–Sn–O Ceramic targets: Preparation following the cold sintering process and properties of the materials;Ceramics International;2023-06

2. Electrochromic coloration of single-layer ITO:Nb oxides thin film;Materials Research Express;2019-09-25

3. Influence of base pressure on property of sputtering deposited ITO film;Journal of Materials Science: Materials in Electronics;2019-06-17

4. Nb-doped Ti2O3 Films Deposited Through Grid-Assisted Magnetron Sputtering on Glass Substrate: Electrical and Optical Analysis;Materials Research;2019

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