Characterization of AlxInyGa1−x−yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Characterization of AlxInyGa1−x−yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy

Published:2011-06 Issue:2 Volume:14 Page:164-169
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Abid M.A.,Abu Hassan H.,Hassan Z.,Ng S.S.,Mohd Bakhori S.K.,Raof N.H.Abd.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

3. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

4. Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells

5. Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of quaternary AlInGaN films obtained by incorporating Al into InGaN film with the RF reactive magnetron sputtering technology;Journal of Materials Science: Materials in Electronics;2016-08-10

2. Effect of Stress in GaN/AlInGaN Grown on GaN Templates with Different Stress States;Chinese Physics Letters;2014-05

3. Electron microscopy investigations of purity of AlN interlayer in AlxGa1−xN/GaN heterostructures grown by plasma assisted molecular beam epitaxy;Applied Physics Letters;2013-05-13

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