Author:
Tsai C.H.,Hsu Y.H.,Santos I.,Pelaz L.,Kowalski J.E.,Liou J.W.,Woon W.Y.,Lee C.K.
Funder
Ministry of Science and Technology, Taiwan
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference36 articles.
1. Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET;Ni;IEEE Symp. IEEE Symp. VLSI Technol.,2015
2. Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes;Ni;IEEE Symp. VLSI Technol.,2016
3. Selective epitaxial Si:P film for nMOSFET application: high phosphorous concentration and high tensile strain;Li;ECS Trans,2014
4. On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films;Dhayalan;Appl. Phys. Lett.,2016
5. Nanowire devices by top–down technology and their applications;Singh;IEEE Trans. Electron. Dev.,2008
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