Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration-Reference-Cited by-同舟云学术

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Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration

Published:2017-11 Issue: Volume:70 Page:139-144
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Taoka Noriyuki,Capellini Giovanni,Schlykow Viktoria,Montanari Michele,Zaumseil Peter,Nakatsuka Osamu,Zaima Shigeaki,Schroeder Thomas

Funder

National Research Foundation Singapore

Silicon Technologies Center of Excellence

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties

2. Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSnyternary alloys

3. Relaxation of strained, epitaxial Si[sub 1−x]Sn[sub x]

4. Germanium Solidus Curves

5. Influence of Ge substrate orientation on crystalline structures of Ge1−Sn epitaxial layers

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm;Journal of Alloys and Compounds;2021-08

2. Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs;Journal of Luminescence;2020-12

3. Impact of ex-situ annealing on strain and composition of MBE grown GeSn;Journal of Physics D: Applied Physics;2020-09-08

4. Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004);Materials Research Express;2020-03-01

5. Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate;Results in Physics;2019-03

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