Growth of a Ge layer on 8in. Si (100) substrates by rapid thermal chemical vapor deposition-Reference-Cited by-同舟云学术

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Growth of a Ge layer on 8in. Si (100) substrates by rapid thermal chemical vapor deposition

Published:2014-05 Issue: Volume:21 Page:58-65
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kil Yeon-Ho,Yang Jong-Han,Kang Sukill,Kim Dae-Jung,Jeong Tae Soo,Choi Chel-Jong,Kim Taek Sung,Shim Kyu-Hwan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference43 articles.

1. On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications

2. High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding

3. High-speed interdigitated Ge PIN photodetectors

4. Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer

5. High performance germanium-on-silicon detectors for optical communications

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate;Journal of Physics D: Applied Physics;2024-03-28

2. Electronic and optical properties of highly boron-doped epitaxial Ge/AlAs(001) heterostructures;Journal of Applied Physics;2020-02-21

3. Suppression of Phosphorous Out-Diffusion in PH₃ Plasma Immersion Ion-Implanted Germanium Epilayer Grown on Silicon (100) Substrate through SiO_x Capping Layer;MATERIALS TRANSACTIONS;2020-01-01

4. Study on Carrier Mobility Model for PD-Ge Monolithic Optoelectronic Integration Chips;Journal of Nanoelectronics and Optoelectronics;2019-12-01

5. Variations of Dark and Photo Currents of Metal-Semiconductor-Metal Photodetectors Fabricated on Ge Epilayer Grown on Si Substrate Caused by the Dimension of Interdigitated Pt Finger Electrodes;Journal of the Korean Physical Society;2019-04

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