The effect of oxide layer thickness on the quantification of 1.5 MeV γ –radiation induced interface traps in the Ag/SiO 2 /Si MOS devices-Reference-Cited by-同舟云学术

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The effect of oxide layer thickness on the quantification of 1.5 MeV γ –radiation induced interface traps in the Ag/SiO 2 /Si MOS devices

Published:2017-09 Issue: Volume:68 Page:30-37
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Khan M. Rizwan,Ishfaq Muhammad,Ali Awais,Bhatti A.S.

Funder

HEC

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Treatment Results of Gamma Knife Radiosurgery for Central Neurocytoma: Report of a Japanese Multi-Institutional Cooperative Study

2. RD50 Collaboration, 〈http://rd50.web.cern.ch/rd50〉.

3. Potential Use of Gamma-Irradiated Ethnic Ready-to-Eat Foods to Improve the Nutritional Status of Landslide Victims

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