Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures-Reference-Cited by-同舟云学术

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Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures

Published:2016-06 Issue: Volume:48 Page:9-13
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Chen Yu-Hai,Liu Hong-Xia,Xu Han-Chen-Xi,Wang Shu-Long,Fan Xiao-Jiao,Zhao Lu,Feng Xing-yao

Funder

National Natural Science Foundation of China

Specialized Research Fund for the Doctoral Program of High Education

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors;Yang;Appl. Phys. Lett.,2014

2. Gate-first AlGaN/GaN HEMT technology for high-frequency applications;Saadat;IEEE Electron Device Lett.,2009

3. Investigation of trap States in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis;Zhu;AIP Adv.,2014

4. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric;Ye;Appl. Phys. Lett.,2005

5. AlGaN/GaN MOS-HEMT with stack gate HfO2/Al2O3 structure grown by atomic layer deposition;Yue;Compd. Semicond. Integr. Circuits Symp.,2008

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of template layers for heteroepitaxial growth of lanthanum oxide on GaN(0001) via atomic layer deposition;Journal of Vacuum Science & Technology A;2020-01

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