Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4869020
Reference26 articles.
1. Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor
2. On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
3. On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate
4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
5. AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers
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