Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures-Reference-Cited by-同舟云学术

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Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures

Published:2016-11 Issue: Volume:55 Page:12-18
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Mutta Geeta Rani,Carapezzi Stefania,Vilalta-Clemente Arantxa,Kauffman Nils A.K.,Grandjean Nicolas,Cavallini Anna

Funder

PRIN

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference40 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

3. The Blue Laser Diode;Nakamura,1997

4. Unusual properties of the fundamental band gap of InN

5. GaInN∕GaN growth optimization for high-power green light-emitting diodes

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2D scaling behavior of nanotextured GaN surfaces: A case study of hillocked and terraced surfaces;Applied Surface Science;2018-07

2. Electrical, photovoltaic and photosensitivity characteristics of p-ZnTe:N/CdTe:Mg/ n -CdTe:I/GaAs for photodiode applications;Materials Science in Semiconductor Processing;2017-08

3. Investigation of Si and O Donor Impurities in Unintentionally Doped MBE-Grown GaN on SiC(0001) Substrate;Journal of Electronic Materials;2017-04-06

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